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| inchange semiconductor isc product specification isc silicon pnp power transistor BUP40 description high collector current-i c = - 6a low collector saturation voltage - : v ce(sat) = -0.4v(max)@ i c = 3a, i b = -0.1a b high switching speed complement to type bup41 applications for audio amplifier and gener al purpose applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage -60 v v ceo collector-emitter voltage -50 v v ebo emitter-base voltage -6 v i c collector current-continuous -6 a p c collector power dissipation @ t c =25 10 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon pnp power transistor BUP40 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ce( sat ) collector-emitter saturation voltage i c = -3a; i b = -0.1a b -1.1 v v be( sat ) base-emitter saturation voltage i c = -3a; i b = -0.1a b -1.4 v i cbo collector cutoff current v cb = -40v; i e = 0 -1.0 a i ebo emitter cutoff current v eb = -4v; i c = 0 -1.0 a h fe-1 dc current gain i c = -1a; v ce = -2v 100 500 h fe-2 dc current gain i c = -5a; v ce = -5v 40 f t current-gain?bandwidth product i c = -1a; v ce = -5v 150 mhz c ob output capacitance i e = 0; v cb = -10v 40 pf isc website www.iscsemi.cn 2 |
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